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| inchange semiconductor isc product specification isc silicon npn power transistors bd375/377/379 description dc current gain- : h fe = 20(min)@ i c = 1a complement to type bd376/378/380 applications designed for medium power linear and switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit bd375 50 BD377 75 v cbo collector-base voltage bd379 100 v bd375 45 BD377 60 v ceo collector-emitter voltage bd379 80 v v ebo emitter-base voltage 5 v i c collector current-continuous 2 a i cm collector current-peak 3 a i b b base current-continuous 1 a p c collector power dissipation @ t c =25 25 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors bd375/377/379 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bd375 45 BD377 60 v ceo(sus) collector-emitter sustaining voltage bd379 i c = 100ma ; i b = 0 80 v bd375 50 BD377 75 v cbo collector-base voltage bd379 i c = 0.1ma ; i e = 0 100 v v ce( sat ) collector-emitter saturation voltage i c = 1a; i b = 0.1a b 1.0 v v be( on ) base-emitter on voltage i c = 1a; v ce = 2v 1.5 v bd375 v cb = 45v; i e = 0 2 BD377 v cb = 60v; i e = 0 2 i cbo collector cutoff current bd379 v cb = 80v; i e = 0 2 a i ebo emitter cutoff current v eb = 5v; i c = 0 0.1 ma h fe-1 dc current gain i c = 0.15a ; v ce = 2v 40 375 h fe-2 dc current gain i c = 1a; v ce = 2v 20 switching times t on turn-on time 0.05 s t off turn-off time i c = 0.5a; i b1 = -i b2 = 50ma; v cc = 30v 0.5 s ? h fe- 1 classifications 6 10 16 25 40-100 63-160 100-250 150-375 isc website www.iscsemi.cn 2 |
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